Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage

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Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage

This paper investigates the punch-through phenomenon in SiC Schottky Barrier Diodes (SBD) from capacitance–voltage (C–V) characteristics at high reverse bias voltage. High voltage bias application has not been possible by conventional measurement instrumentation. The authors, therefore, develop C–V characteristics measurement instrumentation which enables the application of high dc bias voltage...

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ژورنال

عنوان ژورنال: IEICE Electronics Express

سال: 2006

ISSN: 1349-2543

DOI: 10.1587/elex.3.379